PART |
Description |
Maker |
K9F4G08U0D |
4Gb D-die NAND Flash
|
Samsung
|
NAND01GW4A2BE06 NAND01GW3A2B-KGD NAND01GW4A2B-KGD |
Known Good Die, 1 Gbit (x 8/x 16), 528 Byte/264 word page, 3 V, NAND Flash memory
|
Numonyx B.V http://
|
EUA5202QIR0 EUA5202QIR1 |
NAND (SLC) Flash Memory System, 16GB Parallel IDE Solid State Disk Drive NAND (SLC) Flash Memory System, 1GB Parallel IDE Solid State Disk Drive
|
德信科技股份有限公司
|
K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C |
32M x 8 Bit NAND Flash Memory 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 512Mb/256Mb 1.8V NAND Flash Errata
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
TS16GJFV33 |
16GB USB2.0 JetFlash垄芒V33 16GB USB2.0 JetFlash?V33
|
Transcend Information. Inc.
|
KM29W32000T |
4M x 8 Bit NAND Flash Memory(4M x 8 浣?NAND???瀛???ī
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
X76F128HG-2.7 X76F128HE-2.7 X76F128HEG-2.7 |
16K X 8 FLASH 2.7V PROM, UUC ROHS COMPLIANT, DIE 16K X 8 FLASH 2.7V PROM, UUC DIE
|
IC MICROSYSTEMS Sdn. Bhd.
|
AT49F512-70TC AT49F512 AT49F512-70VC AT49F512-70VI |
Quadruple 2-Input Positive-NAND Gate 14-SOIC -40 to 125 64K X 8 FLASH 5V PROM, 90 ns, PDSO32 Quadruple 2-Input Positive-NAND Gate 14-SSOP -40 to 125 64K X 8 FLASH 5V PROM, 90 ns, PDIP32 512K 64K x 8 5-volt Only Flash Memory
|
Atmel, Corp. PROM Atmel Corp. ATMEL[ATMEL Corporation]
|
K9F5608U0C-VIB0 K9F5608Q0C-HIB0 K9F5608U0C-HIB0 K9 |
TV 3C 3#20 PIN WALL RECP 512Mb/256Mb 1.8 NAND闪存勘误 512Mb/256Mb 1.8V NAND Flash Errata 512Mb/256Mb 1.8 NAND闪存勘误 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
|
http:// Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
907-0010 912-0120 914-0040 914-0070 914-0140 912-0 |
PUNCH&DIE SET 3-12MM PUNCH&DIE 10.0MM CIRCULAR PUNCH&DIE 16.5MM CIRCULAR PUNCH&DIE 25.0MM CIRCULAR PUNCH&DIE 12.0MM CIRCULAR PUNCH&DIE 9.0MM CIRCULAR PUNCH&DIE 20.0MM CIRCULAR PUNCH&DIE 12.5MM CIRCULAR STRIPPER 37.0 X 13.7 D CON STRIPPER 31.75MM DIAMETER 低产31.75MM直径 LOUVRE TOOL 卢浮宫工 PUNCH&DIE 10.0MM CIRCULAR STRIPPER 67.2 X 16.5 D CON
|
Peregrine Semiconductor, Corp. Molex, Inc.
|